Optimized test circuits for SER characterization of a manufacturing process
2000 (English)In: IEEE Journal of Solid-State Circuits, ISSN 0018-9200, Vol. 35, no 2, 142-148 p.Article in journal (Refereed) Published
Novel test circuits for the accurate determination of soft error rate (SER) dependency on critical charges QCRIT have been developed. The minimum charge necessary for flipping the state of a sensor cell, denoted by QCRIT, is measured with 1%-2% accuracy before exposing the circuits to radiation. During the accelerated testing, circuits biased with multiple different supply voltages VCC are simultaneously placed into a beam and any bit flips are logged. From the measured SER dependency on VCC and previously measured QCRIT dependency on VCC, the dependency of SER on QCRIT can be deduced by correlating VCC's for the two measurements. Furthermore, the sensor cell utilizes a single dynamic node which can be programmed to detect strikes on either N- or P-type diffusions, but not both at the same time. The measured dependency SER(QCRIT), normalized by the diffusion area, can be used for predicting SER of any other circuit fabricated in the same process and aid designers in optimization for reduced SER. Predictions of a theoretical SER model, if one is available, can be compared directly with the measurements. Since the true QCRIT of the test circuits is known accurately, any discrepancy larger than given by the measurement uncertainty of SER(QCRIT) would be clearly due to limitations of the SER model. We implemented the test circuits in a 0.6-µm bulk CMOS process and verified accuracy of QCRIT (VCC) calibration method.
Place, publisher, year, edition, pages
2000. Vol. 35, no 2, 142-148 p.
IdentifiersURN: urn:nbn:se:liu:diva-47716DOI: 10.1109/4.823440OAI: oai:DiVA.org:liu-47716DiVA: diva2:268612