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Aggregation of carbon interstitials in silicon carbide: A theoretical study
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2003 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 68, no 12Article in journal (Refereed) Published
Abstract [en]

Ab initio supercell calculations have been carried out to investigate clusters of carbon interstitials in 3C- and 4H-SiC. Based on the calculated formation energies, the complex formation of carbon interstitials or their aggregation to carbon antisites is energetically favored in SiC. The electronic and vibronic properties of the carbon interstitials and their aggregates depends strongly on the polytype. Using the calculated hyperfine constants and local vibrational modes of carbon clusters the possible relation to known carbon-related centers will be discussed.

Place, publisher, year, edition, pages
2003. Vol. 68, no 12
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-47750DOI: 10.1103/PhysRevB.68.125201OAI: oai:DiVA.org:liu-47750DiVA: diva2:268646
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Gali, AdamNguyen, Tien SonJanzén, Erik

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Gali, AdamNguyen, Tien SonJanzén, Erik
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The Institute of TechnologyDepartment of Physics, Chemistry and BiologySemiconductor Materials
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