liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Structural investigation of the so-called Ca/Si(111)-(5 x 1) surface
Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan.
Graduate School of Advanced Integration Science, Chiba University, Chiba 263-8522, Japan.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics.
2003 (English)In: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 42, no 7B, 4663-4666 p.Article in journal (Refereed) Published
Abstract [en]

We have investigated the geometric, structure of the so-called Ca/Si(111)-(5 x 1) surface using low-energy electron diffraction (LEED) and high-resolution core-level photoelectron spectroscopy. In LEED, dim extra spots besides the x 5 spots were observed after cooling the sample to 100 K. The positions of these dim spots reveal that this phase has a x 2 periodicity along its one-dimensional (ID) chains. In Si 2p core-level spectra, we observed five surface components. By considering the energy shift and intensity of each surface component and the 0.3ML Ca coverage, we propose a structural model of this surface.

Place, publisher, year, edition, pages
2003. Vol. 42, no 7B, 4663-4666 p.
Keyword [en]
surface structure, 1D metal atom chains on silicon, photoelectron spectroscopy, low-energy electron diffraction, silicon
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47768DOI: 10.1143/JJAP.42.4663OAI: oai:DiVA.org:liu-47768DiVA: diva2:268664
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2012-02-06

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Zhang, HanminUhrberg, Roger

Search in DiVA

By author/editor
Zhang, HanminUhrberg, Roger
By organisation
The Institute of TechnologySurface and Semiconductor Physics
In the same journal
Japanese Journal of Applied Physics
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 39 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf