Narrow-line excitonic photoluminescence in GaN/AlxGa1-xN quantum well structures with inversion domains
2003 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, Vol. 67, no 24, 241306- p.Article in journal (Refereed) Published
Microphotoluminescence studies reveal strong and narrow lines of similar to1-meV minimal width in GaN/AlxGa1-xN quantum well (QW) structures having inversion domains (IDs). These narrow lines coexist in the spectra with broad (10-15 meV) peaks. The features of both kinds are characteristic for intersections of the IDs with QWs, which provide either three- or one-dimensional carrier confinement, depending on both the ID diameter and well width.
Place, publisher, year, edition, pages
2003. Vol. 67, no 24, 241306- p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47770DOI: 10.1103/PhysRevB.67.241306OAI: oai:DiVA.org:liu-47770DiVA: diva2:268666