Intrinsic electric fields in N-polarity GaN/AlxGa1-xN quantum wells with inversion domains
2003 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, Vol. 67, no 19Article in journal (Refereed) Published
GaN/AlGaN quantum wells (QWs) of dominant N polarity with inversion domains (IDs), grown by molecular-beam epitaxy, have been studied. Two-band photoluminescence (PL), with the lower-energy band and an additional absorption edge related to the IDs, is observed in these QWs due to a difference in strain, electric field, and well width in the regions of different polarities. A time-resolved PL study reveals additionally strong inhomogeneity of the electric fields among the IDs. The intrinsic electric fields in the structures are relatively small-their maximal estimated value of 180 kV/cm is among the lowest ever reported. The low-scale electric fields indicate likely polarization deterioration in the N-polarity structures. These conditions are favorable for bright PL up to room temperature in 8-9-nm-wide wells.
Place, publisher, year, edition, pages
2003. Vol. 67, no 19
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47785DOI: 10.1103/PhysRevB.67.195310OAI: oai:DiVA.org:liu-47785DiVA: diva2:268681