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Analysis of the sharp donor-acceptor pair luminescence in 4H-SiC doped with nitrogen and aluminum
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
2003 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 67, no 16Article in journal (Refereed) Published
Abstract [en]

We analyze the sharp lines in the donor-acceptor (nitrogen-aluminum) emission spectrum in 4H-SiC by means of a fit with theoretically calculated spectra. The theory accounts for the anisotropy and the presence of inequivalent sites in this polytype of SiC, and it is shown that the predominant emission in the linear part of the spectrum is due to pairs involving nitrogen donor and aluminum acceptor at hexagonal sites. The fit allows determination of the ionization energy of the aluminum at hexagonal site, 199+/-2 meV, which is in excellent agreement with the results obtained using free-to-bound spectra.

Place, publisher, year, edition, pages
2003. Vol. 67, no 16
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Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47798DOI: 10.1103/PhysRevB.67.165211OAI: oai:DiVA.org:liu-47798DiVA: diva2:268694
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Ivanov, Ivan GueorguievMagnusson, BjörnJanzén, Erik

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