Optical selection rules for shallow donors in 4H-SiC and ionization energy of the nitrogen donor at the hexagonal site
2003 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, Vol. 67, no 16Article in journal (Refereed) Published
The selection rules for transitions between the electronic levels of shallow donors in 4H-SiC in the dipole approximation are derived. The ionization energy of the shallow nitrogen donor (at hexagonal site) is determined to be 61.4+/-0.5 meV by analyzing the photothermal ionization and infrared absorption spectra of nitrogen doped samples in the frame of model that approximates the effective-mass Hamiltonian in 4H-SiC with Hamiltonian of cylindric symmetry (Faulkner's model).
Place, publisher, year, edition, pages
2003. Vol. 67, no 16
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47799DOI: 10.1103/PhysRevB.67.165212OAI: oai:DiVA.org:liu-47799DiVA: diva2:268695