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Correlation between the antisite pair and the D-I center in SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2003 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 67, no 15Article in journal (Refereed) Published
Abstract [en]

The D-I low temperature photoluminescence center is a well-known defect stable up to 1700 degreesC annealing in SiC, still its structure is not yet known. Combining experimental and theoretical studies, in this paper we will show that the properties of an antisite pair can reproduce the measured one-electron level position and local vibration modes of the D-I center, and are consistent with other experimental findings as well. We give theoretical values of the hyperfine constants of the antisite pair in its paramagnetic state as a means to confirm a model.

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2003. Vol. 67, no 15
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-47802DOI: 10.1103/PhysRevB.67.155203OAI: oai:DiVA.org:liu-47802DiVA: diva2:268698
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Gali, AdamNguyen, Tien SonIvanov, Ivan GueorguievCarlsson, FredrikJanzén, Erik

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Gali, AdamNguyen, Tien SonIvanov, Ivan GueorguievCarlsson, FredrikJanzén, Erik
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The Institute of TechnologyDepartment of Physics, Chemistry and BiologySemiconductor Materials
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Physical Review B. Condensed Matter and Materials Physics
Engineering and Technology

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