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Multilayer model for Hall effect data analysis of semiconductor structures with step-changed conductivity
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
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2003 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, Vol. 67, no 4Article in journal (Refereed) Published
Abstract [en]

We present a multilayer model for analysis of Hall effect data of semiconductor structures composed of sublayers with different thicknesses and contacts placed on the top surface. Based on the circuit theory we analyze the contributions of the conductivity of every sublayer and derive general expressions for the conductivity and carrier mobility of a multilayer planar sample. The circuit analysis is performed taking into account the fact that the sample sublayers are partially connected in parallel to each other by series resistances formed in areas lying below the contacts from each upper layer. In order to solve the inverse problem of determining the electrical parameters of one of the sublayers, a procedure for analysis of the Hall effect data is proposed. The model is simplified for a structure composed of two layers with the same type of conductivity, and is used to determine the electrical parameters of GaN films grown on relatively thick GaN buffers.

Place, publisher, year, edition, pages
2003. Vol. 67, no 4
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-47817DOI: 10.1103/PhysRevB.67.045314OAI: diva2:268713
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2011-01-13

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Paskova, TanjaMonemar, Bo
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The Institute of TechnologyDepartment of Physics, Chemistry and BiologyMaterials Science
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