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Ligand hyperfine interaction at the neutral silicon vacancy in 4H- and 6H-SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
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2002 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 66, no 15Article in journal (Refereed) Published
Abstract [en]

The silicon vacancy in its neutral charge state (V-Si) has been unambiguously identified in 4H- and 6H-SiC. This was achieved by observation of ligand hyperfine interaction with the four carbon atoms in the nearest-neighbor shell and the twelve silicon atoms in the next-nearest-neighbor shell surrounding the vacancy. The complete hyperfine tensors have been determined for the V-Si(0) center residing at all inequivalent lattice sites in the two polytypes. These are compared with the parameters previously obtained for the negatively charged silicon vacancy.

Place, publisher, year, edition, pages
2002. Vol. 66, no 15
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47841DOI: 10.1103/PhysRevB.66.155214OAI: oai:DiVA.org:liu-47841DiVA: diva2:268737
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Wagner, MatthiasNguyen, Tien SonChen, WeiminJanzén, ErikHallin, Christer

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Wagner, MatthiasNguyen, Tien SonChen, WeiminJanzén, ErikHallin, Christer
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The Institute of TechnologySemiconductor MaterialsFunctional Electronic MaterialsDepartment of Physics, Chemistry and Biology
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Physical Review B. Condensed Matter and Materials Physics
Engineering and Technology

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