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Surface electronic band structure and (A)over-bar surface state lifetimes at the Be(10(1)over-bar-0) surface: Experiment and theory
MAX-Lab, Lund University, Lund, Sweden.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2001 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 64, no 20Article in journal (Refereed) Published
Abstract [en]

The surface electronic band structure of the Be(10(1) over bar 0) surface is experimentally determined by angle-resolved photoemission and calculated by using density-functional theory. The experimental results agree well with the calculations, except for the fact that we were only able to resolve three surface states in the gap at (L) over bar, instead of four as predicted by the calculations. Through the temperature-dependent study, the phonon contribution subtracted width (h times inverse lifetime) of the shallow surface state at (A) over bar is found to be 51 +/- 8 meV. This is compared with the electron-electron interaction contribution to the width (53 meV) of the shallow surface state at A obtained from model potential calculations.

Place, publisher, year, edition, pages
2001. Vol. 64, no 20
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-47918DOI: 10.1103/PhysRevB.64.205401OAI: oai:DiVA.org:liu-47918DiVA: diva2:268814
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Johansson, LeifVirojanadara, Chariya

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Johansson, LeifVirojanadara, Chariya
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Semiconductor MaterialsThe Institute of TechnologyDepartment of Physics, Chemistry and Biology
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