Silicon antisite in 4H SiC
2001 (English)In: Physical Review Letters, ISSN 0031-9007, Vol. 87, no 4Article in journal (Refereed) Published
Electron paramagnetic resonance spectrum with C-3V symmetry and a spin S = 1/2 has been observed in p-type, electron-irradiated 4H SiC. Based on the observed Si-29 hyperfine structures it is suggested that the defect is the isolated silicon antisite (Si-C). The spin S = 1/2 and the observation of the defect only in p-type material suggest that the Si-C is in the positive-charge state. A strong temperature dependence of the g value and hyperfine coupling constant of the Si-C+ center indicates a considerable lattice relaxation in the vicinity of the defect.
Place, publisher, year, edition, pages
2001. Vol. 87, no 4
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47924DOI: 10.1103/PhysRevLett.87.045502OAI: oai:DiVA.org:liu-47924DiVA: diva2:268820