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Spin polarized La0.7Sr0.3MnO3 thin films on silicon
ISMN-Bo CNR, via Gobetti 101, 40129 Bologna, Italy.
ISMN-Bo CNR, via Gobetti 101, 40129 Bologna, Italy.
ISMN-Bo CNR, via Gobetti 101, 40129 Bologna, Italy.
ISMN-Bo CNR, via Gobetti 101, 40129 Bologna, Italy.
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2007 (English)In: Journal of Magnetism and Magnetic Materials, ISSN 0304-8853, Vol. 312, no 2, 453-457 p.Article in journal (Refereed) Published
Abstract [en]

La0.7Sr0.3MnO3 polycrystalline manganite thin films were grown on silicon (Si) substrates covered by SiOx amorphous native oxide. Curie temperatures of about 325 K were achieved for 70-nm-thick films. Strong room temperature XMCD signal was detected indicating high spin polarization at the surface. Cross-sectional TEM images show sharp interface between SiOx and manganite without signature of chemical reaction at the interface. Unusual sharp splitting of the manganite film was observed: on the top of a transition layer characterized by low crystalline order, a magnetically robust layer is formed. © 2007 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2007. Vol. 312, no 2, 453-457 p.
Keyword [en]
Interface, Manganite, Spintronics
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-47955DOI: 10.1016/j.jmmm.2006.11.221OAI: oai:DiVA.org:liu-47955DiVA: diva2:268851
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2011-01-11

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de Jong, Michel P

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