Influence of well-width fluctuations on the electronic structure of GaN/AlxGa1-xN multiquantum wells with graded interfaces
2007 (English)In: Acta Physica Polonica. A, ISSN 0587-4246, Vol. 112, no 2, 395-400 p.Article in journal (Refereed) Published
Experimental and computation results based on chemical composition assessment of metal-organic chemical vapour deposition grown undoped GaN/AlxGa1-xN multiquantum well structures in the low composition limit of x = 0.07 and wide wells demonstrate composition fluctuations in the barrier layers which lead to large-scale nonuniformities and inequivalence of the different wells. As a consequence the experimental photoluminescence spectra at low temperature show a double peak structure indicative of well-width fluctuations by one lattice parameter (2 monolayers).
Place, publisher, year, edition, pages
2007. Vol. 112, no 2, 395-400 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-47998OAI: oai:DiVA.org:liu-47998DiVA: diva2:268894