liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Strain evolution in high temperature AlN buffer layers for HVPE-GaN growth
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Show others and affiliations
2002 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, Vol. 190, no 1, 59-64 p.Article in journal (Refereed) Published
Abstract [en]

High temperature AlN buffer layers are deposited on a-plane sapphire by reactive magnetron sputtering. The effect of the buffer thickness on the AlN structural properties and surface morphology are studied in correlation with the subsequent hydride vapour phase epitaxy of GaN. A minimum degree of mosaicity and screw dislocation density is determined for a 50 nm thick AlN buffer. With increasing the AlN thickness, a strain relaxation occurs as a result of misfit dislocation generation and higher degree of mosaicity. A blue shift of the E-1(TO) frequency evaluated by means of infrared reflection spectroscopy is linearly correlated with an increase in biaxial compressive stress in the films through the IR stress factor k(E1)(b) = 2.57 +/- 0.26 cm(-1) GPa(-1).

Place, publisher, year, edition, pages
2002. Vol. 190, no 1, 59-64 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48172OAI: oai:DiVA.org:liu-48172DiVA: diva2:269068
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2011-01-13

Open Access in DiVA

No full text

Authority records BETA

Darakchieva, VanyaBirch, JensPaskov, PlamenTungasmita, SukkanestePaskova, TanjaMonemar, Bo

Search in DiVA

By author/editor
Darakchieva, VanyaBirch, JensPaskov, PlamenTungasmita, SukkanestePaskova, TanjaMonemar, Bo
By organisation
The Institute of TechnologyMaterials Science Thin Film PhysicsDepartment of Physics, Chemistry and Biology
In the same journal
Physica status solidi. A, Applied research
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 198 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf