Nonequilibrium carrier diffusion and recombination in heavily-doped and semi-insulating bulk HTCVD grown 4H-SiC crystals
2005 (English)In: Materials Science Forum, Vols. 483-485, 2005, Vol. 483, 409-412 p.Conference paper (Refereed)
We applied four-wave mixing (FWM) technique for investigation of high temperature chemical vapour deposition (HTCVD) grown 4H-SiC samples with different doping levels. The determined minority electron and hole mobilities in heavily doped crystals at doping densities of 1019 cm(-3) were found to be equal to 116 and 52 cm(2)/Vs. In semi-insulating (SI) crystals, the ambipolar diffusion coefficient Da = 2.6 - 3.3 cm(2) A and carrier lifetimes of 1.5 - 2.5 ns have been measured. Irradiation of SI crystals by 6 MeV electrons resulted in essential decrease of carrier lifetime down to &SIM, 100 ps and clearly revealed the defect-assisted carrier generation with respect to two-photon interband transitions before irradiation.
Place, publisher, year, edition, pages
2005. Vol. 483, 409-412 p.
four-wave mixing, 4H-SiC, carrier transport
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48225OAI: oai:DiVA.org:liu-48225DiVA: diva2:269121