Optical studies of nonequilibrium carrier dynamics in highly excited 4H-SiC epitaxial layers
2005 (English)In: Materials Science Forum, Vols. 483-485, 2005, Vol. 483, 413-416 p.Conference paper (Refereed)
We applied picosecond four-wave mixing technique to investigate carrier diffusion and recombination in n-type 4H-SiC epilayers. The dependence of bipolar diffusion coefficient D on photocarrier density was measured in range from &SIM, 10(17) to 10(20) Cm-3. We determined a decrease of D value from 3.4 to 2.2 cm(2)/S with increase of the photoexcitation level in range from &SIM, 10(17) to &SIM, 10(19) cm(-3), and found its increase up to 3.8 cm(2)/s at carrier density above 1020 cm(-3). Auger recombination governed decrease of carrier lifetime from 11 ns at &SIM, 10(17) cm(-3) to 1.8 ns at &SIM, 10(20) cm(3) has also been observed.
Place, publisher, year, edition, pages
2005. Vol. 483, 413-416 p.
4H-SiC, four-wave mixing, carrier diffusion and recombination
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48226OAI: oai:DiVA.org:liu-48226DiVA: diva2:269122