Observation of vacancy clusters in HTCVD grown SiC
2005 (English)In: Materials Science Forum, Vols. 483-485, 2005, Vol. 483, 469-472 p.Conference paper (Refereed)
Positron lifetime spectroscopy was used to study defects in semi-insulating (SI) silicon carbide (SiC) substrates grown by high-temperature chemical vapor deposition (HTCVD). The measured positron lifetime spectra can be decomposed into two components, of which the longer corresponds to vacancy clusters. We have carried out atomic superposition calculations to estimate the size of these clusters.
Place, publisher, year, edition, pages
2005. Vol. 483, 469-472 p.
SiC, HTCVD, positron, vacancy cluster, atomic superposition
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48228OAI: oai:DiVA.org:liu-48228DiVA: diva2:269124