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Effective-mass theory of shallow donors in 4H-SIC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2005 (English)In: Materials Science Forum(ISSN 0255-5476), Vols. 483-485, Trans Tech Publications , 2005, Vol. 483, 511-514 p.Conference paper, Published paper (Refereed)
Abstract [en]

The one-valley effective-mass approximation is developed for the case of uniaxial crystals with indirect bandgap and applied to the donor states in 4H-SiC. Good agreement is found between the theory and experiments providing data on the electronic states of the shallowest nitrogen donor in 4H-SiC. The ionization energy of this donor is deduced to be 61.35 &PLUSMN, 0.2 meV.

Place, publisher, year, edition, pages
Trans Tech Publications , 2005. Vol. 483, 511-514 p.
Keyword [en]
effective-mass theory, nitrogen donor
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48229OAI: oai:DiVA.org:liu-48229DiVA: diva2:269125
Conference
ECSCRM2004
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-15

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Ivanov, Ivan GueorguievJanzén, Erik

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