Effective-mass theory of shallow donors in 4H-SIC
2005 (English)In: Materials Science Forum(ISSN 0255-5476), Vols. 483-485, Trans Tech Publications , 2005, Vol. 483, 511-514 p.Conference paper (Refereed)
The one-valley effective-mass approximation is developed for the case of uniaxial crystals with indirect bandgap and applied to the donor states in 4H-SiC. Good agreement is found between the theory and experiments providing data on the electronic states of the shallowest nitrogen donor in 4H-SiC. The ionization energy of this donor is deduced to be 61.35 &PLUSMN, 0.2 meV.
Place, publisher, year, edition, pages
Trans Tech Publications , 2005. Vol. 483, 511-514 p.
effective-mass theory, nitrogen donor
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48229OAI: oai:DiVA.org:liu-48229DiVA: diva2:269125