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Characterization of 4H-SiC MOS structures with Al2O3 as gate dielectric
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2005 (English)In: Materials Science Forum, Vols. 483-485, 2005, Vol. 483, 709-712 p.Conference paper, Published paper (Refereed)
Abstract [en]

The electrical properties of Al2O3 as a gate dielectric in MOS structures based on n- and p-type 4H-SiC grown by sublimation method have been investigated and compared to the properties of similar structures utilizing SiO2. The electrically active defects in the structures are studied by CV method. The results show that the type as well as spatial and energy distribution of defects in Al2O3/SiC and SiO2/SiC samples are different. The structures with Al2O3 on p-type 4H-SiC demonstrate much better C-V characteristics than the p-type 4H-SiC/SiO2 structures.

Place, publisher, year, edition, pages
2005. Vol. 483, 709-712 p.
Keyword [en]
high-k dielectrics on SiC, Al(2)O3, MOS structures
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48231OAI: oai:DiVA.org:liu-48231DiVA: diva2:269127
Conference
ECSCRM2004
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-08

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Ciechonski, RafalSyväjärvi, MikaelYakimova, Rositsa

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