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High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material
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2005 (English)In: Materials Science Forum, Vols. 483-485, 2005, Vol. 483, 841-844 p.Conference paper, Published paper (Refereed)
Abstract [en]

We report on fabrication and characterization of n-channel Si face 4H-SiC MOSFETs made using sublimation grown epitaxial material. Transistors made on this material exhibit record-high peak field effect mobility of 208 cm(2)/Vs while reference transistors made on a commercial epitaxial material grown by chemical vapor deposition (CVD) show field effect mobility of 125 cm(2)/VS. The mobility enhancement is attributed to better surface morphology of the sublimation grown epitaxial layer.

Place, publisher, year, edition, pages
2005. Vol. 483, 841-844 p.
Keyword [en]
MOSFET, field effect mobility, sublimation growth
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48232OAI: oai:DiVA.org:liu-48232DiVA: diva2:269128
Conference
ECSCRM2004
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-08

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Nilsson, PatrikSyväjärvi, MikaelYakimova, RositsaHallin, Christer

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Nilsson, PatrikSyväjärvi, MikaelYakimova, RositsaHallin, Christer
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The Institute of TechnologyDepartment of Physics, Chemistry and BiologySemiconductor Materials
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