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A 4H-SiC BJT with an epitaxially regrown extrinsic base layer
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2005 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 483, 905-908 p.Article in journal (Refereed) Published
Abstract [en]

4H-SiC BJTs were fabricated using epitaxial regrowth instead of ion implantation to form a highly doped extrinsic base layer necessary for a good base ohmic contact. A remaining p(+) regrowth spacer at the edge of the base-emitter junction is proposed to explain a low current gain of 6 for the BJTs. A breakdown voltage of 1000 V was obtained for devices with Al implanted JTE.

Place, publisher, year, edition, pages
2005. Vol. 483, 905-908 p.
Keyword [en]
bipolar junction transistor, extrinsic base, epitaxial regrowth
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48234OAI: oai:DiVA.org:liu-48234DiVA: diva2:269130
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Hallin, Christer

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Hallin, Christer
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The Institute of TechnologyDepartment of Physics, Chemistry and Biology
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