A 4H-SiC BJT with an epitaxially regrown extrinsic base layer
2005 (English)In: Materials Science Forum, ISSN 0255-5476, Vol. 483, 905-908 p.Article in journal (Refereed) Published
4H-SiC BJTs were fabricated using epitaxial regrowth instead of ion implantation to form a highly doped extrinsic base layer necessary for a good base ohmic contact. A remaining p(+) regrowth spacer at the edge of the base-emitter junction is proposed to explain a low current gain of 6 for the BJTs. A breakdown voltage of 1000 V was obtained for devices with Al implanted JTE.
Place, publisher, year, edition, pages
2005. Vol. 483, 905-908 p.
bipolar junction transistor, extrinsic base, epitaxial regrowth
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48234OAI: oai:DiVA.org:liu-48234DiVA: diva2:269130