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Comment on "Pulsed laser deposition and properties of M(n+1)AX(x) phase formulated Ti3SiC2 thin films''
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0003-1785-0864
Department of Materials Chemistry, The Angström Laboratory, Uppsala University, Uppsala, Swede.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
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2004 (English)In: Tribology letters, ISSN 1023-8883, E-ISSN 1573-2711, Vol. 17, no 4, 977-978 p.977-978 p.Article in journal, Editorial material (Other academic) Published
Abstract [en]

A recent paper by Hu et al. claimed synthesis of the MAX-phase Ti3SiC2 at 100 - 300 degreesC using pulsed laser deposition. In this comment, we find that the evidence presented by Hu et al. is insufficient to show Ti3SiC2 formation. In fact, there is a simpler interpretation of their results from X-ray diffraction and transmission electron microscopy, namely that the material produced is a cubic TiC-based compound.

Place, publisher, year, edition, pages
2004. Vol. 17, no 4, 977-978 p.977-978 p.
Keyword [en]
Ti3SiC2, MAX phase, titanium carbide, thin films, pulsed laser deposition, X-ray diffraction, transmission electron microscopy
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48248DOI: 10.1007/s11249-004-8112-yOAI: oai:DiVA.org:liu-48248DiVA: diva2:269144
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12Bibliographically approved

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Eklund, PerEmmerlich, JensHögberg, HansHultman, Lars

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