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SiC crystal growth by HTCVD
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0002-9840-7364
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2004 (English)In: Materials Science Forum, Vols. 457-460, 2004, Vol. 457-460, 9- p.Conference paper, Published paper (Refereed)
Abstract [en]

Advances in the development of the HTCVD technique for growth of bulk 2-inch diameter 4H SiC crystals are reviewed with demonstration of micropipe density down to 0.3 cm(-2), low crystal bending and X-ray rocking curve widths of 12". High Al doping in p-type substrates enables resistivities down to 0.5 Omega cm without increased micropipe density, while too high N doping causes spontaneous stacking faults formation in annealed n-type substrates. High purity semi-insulating wafers, grown under conditions reducing the incorporation of Si-vacancies, exhibit lower density of vacancy clusters and better properties for microwave device applications.

Place, publisher, year, edition, pages
2004. Vol. 457-460, 9- p.
Keyword [en]
bulk growth, HTCVD, micropipe, dislocations, bending, semi-insulating, vacancies
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48295OAI: oai:DiVA.org:liu-48295DiVA: diva2:269191
Conference
ICSCRM2003
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2015-09-22

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Magnusson, BjörnPozina, GaliaBergman, PederJanzén, Erik

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