Growth of device quality 4H-SiC by high velocity epitaxy
2004 (English)In: Materials Science Forum, Vols. 457-460, 2004, Vol. 457-460, 201-204 p.Conference paper (Refereed)
Thick (>20 μm) 4H-SiC layers in doping range of low 1015-1016 cm-3 were grown by sublimation epitaxy at a growth rate of similar to50 mum/hour. Two inch 25 μm thick layers were fabricated with standard thickness deviation of 3.77%. Effect of important process parameters on the material grade has been discussed. The Schottky diodes processed on this material sustained 900V reverse voltage at a current of 1.7 x 10-8 A, while measured on MOS capacitors the interface state density was as low as similar to6-9 x 1010 cm-2.
Place, publisher, year, edition, pages
2004. Vol. 457-460, 201-204 p.
fast growth, sublimation epitaxy, 4H-SiC, device quality, schottky diode, MOS capacitor, interface state density
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48297DOI: 10.4028/www.scientific.net/MSF.457-460.201OAI: oai:DiVA.org:liu-48297DiVA: diva2:269193
ICSCRM 2003, Lyon, Fance, October 5-10, 2003