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Simple model for calculation of SiC epitaxial layers growth rate in vacuum.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2004 (English)In: Materials Science Forum, Vols. 457-460, 2004, Vol. 457-460, 249-252 p.Conference paper, Published paper (Refereed)
Abstract [en]

Within the frame of a simple model, based on Hertz-Knudsen equation with account of temperature dependant sticking coefficient, temperature dependence of silicon carbide epitaxial layers growth rate in vacuum has been calculated. Calculation results are in a good agreement with the experimental data.

Place, publisher, year, edition, pages
2004. Vol. 457-460, 249-252 p.
Keyword [en]
simple model, growth rate, sublimation epitaxy, vacuum, SiC
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48300OAI: oai:DiVA.org:liu-48300DiVA: diva2:269196
Conference
ICSCRM2003
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-08

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Lebedev, AlexanderSyväjärvi, MikaelYakimova, Rositsa

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Lebedev, AlexanderSyväjärvi, MikaelYakimova, Rositsa
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The Institute of TechnologyDepartment of Physics, Chemistry and BiologySemiconductor Materials
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