A photoemission study of polar and non-polar SiC surfaces oxidized in N2O.
2004 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, Trans Tech Publications Inc., 2004, Vol. 457-460, 1329-1332 p.Conference paper (Refereed)
Angle resolved photoemission studies of SiO2/SiC samples grown ex situ in N2O on polar and non-polar 4H-SiC surfaces are reported. Data from the Si 1s and Si 2p core levels and the Si KL2,3L2,3 Auger transitions are analyzed and compared to data from a sample grown in O-2 on the (0001) surface. The results show oxide growth without nitride or oxy-nitride formation. Presence of two oxidation states, SiO2 and a sub-oxide explains recorded Si 1s. Si 2p and Si KLL spectra. Estimates of the oxide layer thickness show that the oxidation rate is highest for the (10 (1) under bar0) surface, somewhat smaller and similar for the (11 (2) under bar0) and (000 (1) under bar) surfaces, and smaller by a factor of about two for the (0001) surface.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2004. Vol. 457-460, 1329-1332 p.
, Materials Science Forum, ISSN 0255-5476 ; Vols. 457-460
silicon carbide, oxidation, angle resolved photoemission
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48312DOI: 10.4028/www.scientific.net/MSF.457-460.1329ISI: 000222802200316OAI: oai:DiVA.org:liu-48312DiVA: diva2:269208
10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003), Lyon, France, OCT 05-10, 2003