liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Substrate bias amplification of a SiC junction field effect transistor with a catalytic gate electrode
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Physics .
Show others and affiliations
2004 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 457-460, 1507-1510 p.Article in journal (Refereed) Published
Abstract [en]

The drain current-voltage (I-d-V-D) characteristics of a chemical gas sensor based on a catalytic metal insulator silicon carbide field effect transistor (SiC-FET) were measured in H-2 or O-2 ambient while applying negative substrate bias, V-sub, at temperatures up to 600degreesC. An increase in the negative V-sub gives rise to an increase of the drain voltage at a given drain current level, which can be used to adjust the device baseline. In addition, we found that the difference in drain voltage between H-2 and O-2 ambient at a given drain current level (the gas response to H-2) increases for an increased negative substrate bias. By modifying an equation for the drain current in a SIT (static induction transistor), the influence of substrate bias on the amplification factors, mu and eta, was estimated using the temperature dependence of the I-d-V-D characteristics. From this, the effect of substrate bias on the gas response to hydrogen was calculated. It was clarified that the increase in the gas response caused by the negative substrate bias is due to a substrate bias dependence of the amplification factor of the short channel device.

Place, publisher, year, edition, pages
2004. Vol. 457-460, 1507-1510 p.
Keyword [en]
gas sensor, catalytic gate, substrate bias, buried channel, JFET, SIT, high temperature
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48313OAI: oai:DiVA.org:liu-48313DiVA: diva2:269209
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

Open Access in DiVA

No full text

Authority records BETA

Unéus, LarsWingbrant, HelenaLundström, IngemarLöfdahl, MikaelLloyd-Spets, Anita

Search in DiVA

By author/editor
Unéus, LarsWingbrant, HelenaLundström, IngemarLöfdahl, MikaelLloyd-Spets, Anita
By organisation
The Institute of TechnologyApplied Physics Department of Physics, Chemistry and Biology
In the same journal
Materials Science Forum
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 227 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf