Substrate bias amplification of a SiC junction field effect transistor with a catalytic gate electrode
2004 (English)In: Materials Science Forum, ISSN 0255-5476, Vol. 457-460, 1507-1510 p.Article in journal (Refereed) Published
The drain current-voltage (I-d-V-D) characteristics of a chemical gas sensor based on a catalytic metal insulator silicon carbide field effect transistor (SiC-FET) were measured in H-2 or O-2 ambient while applying negative substrate bias, V-sub, at temperatures up to 600degreesC. An increase in the negative V-sub gives rise to an increase of the drain voltage at a given drain current level, which can be used to adjust the device baseline. In addition, we found that the difference in drain voltage between H-2 and O-2 ambient at a given drain current level (the gas response to H-2) increases for an increased negative substrate bias. By modifying an equation for the drain current in a SIT (static induction transistor), the influence of substrate bias on the amplification factors, mu and eta, was estimated using the temperature dependence of the I-d-V-D characteristics. From this, the effect of substrate bias on the gas response to hydrogen was calculated. It was clarified that the increase in the gas response caused by the negative substrate bias is due to a substrate bias dependence of the amplification factor of the short channel device.
Place, publisher, year, edition, pages
2004. Vol. 457-460, 1507-1510 p.
gas sensor, catalytic gate, substrate bias, buried channel, JFET, SIT, high temperature
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48313OAI: oai:DiVA.org:liu-48313DiVA: diva2:269209