Hall effect data analysis of GaN n(+)n structures
2002 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, Vol. 234, no 3, 872-876 p.Article in journal (Refereed) Published
We develop a model for analysis of Hall effect data of GaN structures composed of sublayers with different thicknesses and contacts placed on the top surface, We analysed the contributions of the conductivity of every sublayer of a planar sample taking into account the fact that the sample sublayers are partially connected in parallel to each other by series resistances formed in areas lying below the contacts from the upper layer. Correction factors, which reduce the contribution of the underlying layers to the measured whole sample conductivity, are obtained from the equations relevant to the respective equivalent circuit.
Place, publisher, year, edition, pages
2002. Vol. 234, no 3, 872-876 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48335OAI: oai:DiVA.org:liu-48335DiVA: diva2:269231