Nanometric-scale fluctuations of intrinsic electric fields in GaN/AlGaN quantum wells with inversion domains
2002 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, Vol. 234, no 3, 919-923 p.Article in journal (Refereed) Published
Strain and electric field fluctuations in regions of different polarities in GaN/AlGaN quantum well (QW) structures of dominant N-polarity with inversion domains (IDs) split the photoluminescence (PL) emission into two bands. Micro-PL and time-resolved PL studies reveal strong inhomogeneity of the array of the IDs, where essential parameters, such as strain, electric fields, and sizes are fluctuating quantities. We demonstrate also that the ID formation decreases the intrinsic electric field magnitudes.
Place, publisher, year, edition, pages
2002. Vol. 234, no 3, 919-923 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48336OAI: oai:DiVA.org:liu-48336DiVA: diva2:269232