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Nanopipes in thick GaN films grown at high growth rate
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0001-9140-6724
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
2002 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396X, Vol. 194, no 2, 532-535 p.Article in journal (Refereed) Published
Abstract [en]

In this work we illustrate and describe long propagating nanopipes in thick HVPE-GaN layers analysed by means of transmission electron microscopy. They are observed to behave like screw component threading dislocations, terminating surface steps by hexagonal pits, and thus leading to the possibility of spiral growth. The formation of a nanopipe is observed by trapping of a screw dislocation at a pinhole that opens in an empty core. The mechanism of formation of nanopipes is likely to be connected to the growth kinetics of screw dislocations in the early stages of growth of highly strained material.

Place, publisher, year, edition, pages
2002. Vol. 194, no 2, 532-535 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48337OAI: oai:DiVA.org:liu-48337DiVA: diva2:269233
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Paskova, TanjaPersson, PerMonemar, Bo

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