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Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
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2004 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 33, no 5, 389-394 p.Article in journal (Refereed) Published
Abstract [en]

The strain distribution in thick hydride vapor-phase epitaxial (HVPE)-GaN layers grown on metal-organic vapor-phase epitaxial GaN templates was studied by means of photoluminescence, x-ray mapping, and lattice parameter analysis. A variable temperature x-ray study of the film curvature was used for verification of the strain type. The relation between the strain inhomogeneity and the wafer bending in films residing on sapphire and freestanding on the thickness of the layer and the substrate is analyzed. Possibilities to improve the uniformity of the film characteristics and to reduce the bending of the HVPE-GaN films are discussed.

Place, publisher, year, edition, pages
2004. Vol. 33, no 5, 389-394 p.
Keyword [en]
GaN, HVPE, strain, wafer bending
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48386OAI: oai:DiVA.org:liu-48386DiVA: diva2:269282
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-12

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Paskova, TanjaDarakchieva, VanyaPaskov, PlamenIvanov, Ivan GueorguievMonemar, Bo

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Paskova, TanjaDarakchieva, VanyaPaskov, PlamenIvanov, Ivan GueorguievMonemar, Bo
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