Sublimation epitaxy of AIN layers on 4H-SiC depending on the type of crucible
2003 (English)In: Journal of materials science. Materials in electronics, ISSN 0957-4522, E-ISSN 1573-482X, Vol. 14, no 10-12, 767-768 p.Article in journal (Refereed) Published
Epitaxial layers of aluminum nitride less than or equal to335 mum thick have been grown attemperatures of 1900 and 2100degreesC on 10 x 10 mm(2) (0001)-oriented alpha(4H) silicon carbide (SiC), with growth times of 1 and 4h, via sublimation-recondensation in a RF-heated graphite furnace. The source material was polycrystalline AIN. The sublimation process was performed in three types of graphite (C) crucible: C-1, C-2 with inner diameters of 35 and 51 mm, respectively, and C-3 with the same inner diameter as C-1, but coated with a layer of TaC. The surface morphology reflects the hexagonal symmetry of the substrate, suggesting an epitaxial growth for samples grown in C-1 and C-3 crucibles for all growth conditions. The same symmetry is observed for AIN layers grown in the C-2 crucible, but only at 2100degreesC. X-ray diffraction analyses confirm the epitaxial growth of AIN samples with the expected hexagonal symmetry. A high-resolution X-ray diffractometer was used to assess the quality of the single crystals. A full width at half maximum of 242 arcsec was achieved for an AIN layer grown in the crucible coated with TaC. (C) 2003 Kluwer Academic Publishers.
Place, publisher, year, edition, pages
2003. Vol. 14, no 10-12, 767-768 p.
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48505OAI: oai:DiVA.org:liu-48505DiVA: diva2:269401