Effect of carrier concentration on the microhardness of GaN layers
2003 (English)In: Journal of materials science. Materials in electronics, ISSN 0957-4522, Vol. 14, no 10-12, 771-772 p.Article in journal (Refereed) Published
The paper presents a microhardness study of thick crack-free hydride vapor phase epitaxial GaN layers (not intentionally doped), and of thin metal-organic vapor phase epitaxial (MOVPE) GaN layers (undoped and Si-doped), grown on sapphire. A Vickers indentation method was used to determine the microhardness under applied loads up to 2 N. An increase in the microhardness was observed with decreasing carrier concentration and increasing mobility. A dip at an indentation depth of about 0.75 mum is observed in the microhardness profile in the MOVPE films, and is correlated with peculiarities in the spatially resolved cathodoluminescence spectra. The relationship between the mechanical and electrophysical parameters is discussed. (C) 2003 Kluwer Academic Publishers.
Place, publisher, year, edition, pages
2003. Vol. 14, no 10-12, 771-772 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48506OAI: oai:DiVA.org:liu-48506DiVA: diva2:269402