Growth of high quality p-type 4H-SiC substrates by HTCVD
2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 21-24 p.Conference paper (Refereed)
By using the HTCVD technique together with Al doping, highly p-type doped 2" diameter 4H-SiC off-axis substrates with micropipe densities below 10 cm(-2) were grown. The Al concentration in the substrates could be varied from low 10(15) cm(-3) to low 10(19) cm(-3). Bulk resistivities down to 0.5 Omega-cm were realized. There were no indications of micropipe formation from Al precipitates, on the contrary, micropipe closing was observed.
Place, publisher, year, edition, pages
2003. Vol. 433-4, 21-24 p.
Al doping, HTCVD, micropipes, SiC bulk growth
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48527OAI: oai:DiVA.org:liu-48527DiVA: diva2:269423