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HTCVD grown semi-insulating SiC substrates
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 33-38 p.Conference paper, Published paper (Refereed)
Abstract [en]

The low residual doping of HTCVD grown semi-insulating SiC crystals enables the use of decreased concentrations of compensating deep levels, thereby providing new material solutions for microwave devices. Depending on the growth conditions, high resistivity crystals with either a dominating Si-vacancy absorption or with an EPR signature of intrinsic defects such as the C-vacancy and the Si-antisite are obtained. The electrical properties of substrates with resistivities above 10(11) Omega-cm are shown to be stable upon annealing during SiC epitaxy conditions. Micropipe closing at the initial growth stage enables the demonstration of low defect density off- and on-axis 2 2-inch semi-insulating 4H SiC substrates with micropipe densities down to 1.2 cm(-2).

Place, publisher, year, edition, pages
2003. Vol. 433-4, 33-38 p.
Keyword [en]
HTCVD growth, intrinsic defects, micropipe closing, purity, semi-insulating substrate
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48528OAI: oai:DiVA.org:liu-48528DiVA: diva2:269424
Conference
ECSCRM2002
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-08

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Magnusson, BjörnNguyen, Tien SonStorasta, LiutaurasJanzén, Erik

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