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Defects in semi-insulating SiC substrates
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 45-50 p.Conference paper, Published paper (Refereed)
Abstract [en]

Electron paramagnetic resonance (EPR) was used to study defects in semi-insulating (SI) SiC substrates grown by high-temperature chemical vapour deposition (HTCVD) and physical vapour transport (PVT). The C vacancy, Si antisite and several other EPR centers, labelled SI-I to SI-8, were observed in the HTCVD and/or PVT 4H-SiC substrates. Photo-EPR has revealed several deep levels responsible for the SI properties in different types of SI 4H-SiC. Annealing behaviour of the defects and the stability of the SI properties with high temperature annealing were also studied.

Place, publisher, year, edition, pages
2003. Vol. 433-4, 45-50 p.
Keyword [en]
impurities, intrinsic defects, magnetic resonance, resistivity, semi-insulating, thermal annealing
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48529OAI: oai:DiVA.org:liu-48529DiVA: diva2:269425
Conference
ECSCRM2002
Note
Invited TalkAvailable from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-06

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Nguyen, Tien SonMagnusson, BjörnJanzén, Erik

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