Defects in semi-insulating SiC substrates
2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 45-50 p.Conference paper (Refereed)
Electron paramagnetic resonance (EPR) was used to study defects in semi-insulating (SI) SiC substrates grown by high-temperature chemical vapour deposition (HTCVD) and physical vapour transport (PVT). The C vacancy, Si antisite and several other EPR centers, labelled SI-I to SI-8, were observed in the HTCVD and/or PVT 4H-SiC substrates. Photo-EPR has revealed several deep levels responsible for the SI properties in different types of SI 4H-SiC. Annealing behaviour of the defects and the stability of the SI properties with high temperature annealing were also studied.
Place, publisher, year, edition, pages
2003. Vol. 433-4, 45-50 p.
impurities, intrinsic defects, magnetic resonance, resistivity, semi-insulating, thermal annealing
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48529OAI: oai:DiVA.org:liu-48529DiVA: diva2:269425