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Predictions of nitrogen doping in SiC epitaxial layers
Linköping University, Faculty of Health Sciences. Linköping University, Department of Neuroscience and Locomotion.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 137-140 p.Conference paper, Published paper (Refereed)
Abstract [en]

Growth of device quality epitaxial layers requires precise control of thickness and doping uniformities. Computer simulations can provide growers with the necessary knowledge for improving and optimizing the growth process. In this work, the CVD process is simulated in three dimensions, using a reaction-mass transport model. A simplified quantitative model for the nitrogen incorporation in intentionally doped 4H-SiC samples has been developed and applied to a wide range of process parameters. Different reaction schemes are necessary for the two faces of SiC to account for the different doping incorporation behavior. The simulations are validated by experimental data measured by SIMS with good agreement.

Place, publisher, year, edition, pages
2003. Vol. 433-4, 137-140 p.
Keyword [en]
CVD, doping, epitaxy, modeling, simulation
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48531OAI: oai:DiVA.org:liu-48531DiVA: diva2:269427
Conference
ECSCRM2002
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-06

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Danielsson, OlofForsberg, UrbanJanzén, Erik

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Faculty of Health SciencesDepartment of Neuroscience and LocomotionThe Institute of TechnologySemiconductor Materials
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