Nitrogen delta doping in 4H-SiC epilayers
2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 153-156 p.Conference paper (Refereed)
Buried nitrogen delta-doped SiC 4H epitaxial layers have been grown in a horizontal hotwall chemical vapor deposition reactor. The history of the growth parameters was recorded. Secondary ion mass spectrometry (SIMS) and Capacitance-Voltage (CV) were carried out to investigate the nitrogen doping distribution. Evaluation of the growth rate as a function of the time is determined with emphasis on the beginning of the growth when a transient of the growth rate is observed.
Place, publisher, year, edition, pages
2003. Vol. 433-4, 153-156 p.
CVD, delta-doping, growth rate
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48533OAI: oai:DiVA.org:liu-48533DiVA: diva2:269429