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Nitrogen delta doping in 4H-SiC epilayers
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-5768-0244
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 153-156 p.Conference paper, Published paper (Refereed)
Abstract [en]

Buried nitrogen delta-doped SiC 4H epitaxial layers have been grown in a horizontal hotwall chemical vapor deposition reactor. The history of the growth parameters was recorded. Secondary ion mass spectrometry (SIMS) and Capacitance-Voltage (CV) were carried out to investigate the nitrogen doping distribution. Evaluation of the growth rate as a function of the time is determined with emphasis on the beginning of the growth when a transient of the growth rate is observed.

Place, publisher, year, edition, pages
2003. Vol. 433-4, 153-156 p.
Keyword [en]
CVD, delta-doping, growth rate
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48533OAI: oai:DiVA.org:liu-48533DiVA: diva2:269429
Conference
ECSCRM2002
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2014-10-08

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Henry, AnneStorasta, LiutaurasJanzén, Erik

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