Origin and behaviour of deep levels in sublimation growth of 4H-SiC layers
2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 169-172 p.Conference paper (Refereed)
The characteristics of boron incorporation and the resultant electrical behaviour have been studied for sublimation grown epilayers. Some factors which influence are the purity of the source material, growth temperature and growth time. The electrical activity of the shallow and deep level of boron has been investigated in relation to growth parameters and from the results the nature of the deep boron complex is discussed. The use of TaC coated graphite crucibles resulted in a decrease of the Z(1,2) concentration to less than low E13 cm(-3) which is the concentration obtained using graphite crucibles.
Place, publisher, year, edition, pages
2003. Vol. 433-4, 169-172 p.
boron, deep levels, epitaxy, sublimation
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48534OAI: oai:DiVA.org:liu-48534DiVA: diva2:269430