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Origin and behaviour of deep levels in sublimation growth of 4H-SiC layers
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 169-172 p.Conference paper, Published paper (Refereed)
Abstract [en]

The characteristics of boron incorporation and the resultant electrical behaviour have been studied for sublimation grown epilayers. Some factors which influence are the purity of the source material, growth temperature and growth time. The electrical activity of the shallow and deep level of boron has been investigated in relation to growth parameters and from the results the nature of the deep boron complex is discussed. The use of TaC coated graphite crucibles resulted in a decrease of the Z(1,2) concentration to less than low E13 cm(-3) which is the concentration obtained using graphite crucibles.

Place, publisher, year, edition, pages
2003. Vol. 433-4, 169-172 p.
Keyword [en]
boron, deep levels, epitaxy, sublimation
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48534OAI: oai:DiVA.org:liu-48534DiVA: diva2:269430
Conference
ECSCRM2002
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-06

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Syväjärvi, MikaelYakimova, RositsaCiechonski, RafalLebedev, AlexanderJanzén, Erik

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Syväjärvi, MikaelYakimova, RositsaCiechonski, RafalLebedev, AlexanderJanzén, Erik
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The Institute of TechnologySemiconductor MaterialsDepartment of Physics, Chemistry and Biology
Engineering and Technology

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