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Vacancies in As-grown and electron-irradiated 4H-SiC epilayers investigated by positron annihilation
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 173-176 p.Conference paper, Published paper (Refereed)
Abstract [en]

Epilayers of 4H-SiC were investigated by positron annihilation spectroscopies: four epilayers and their substrates were investigated. The epilayers (47 to 220 mum thick) contained significantly lower grown-in vacancy concentration than did their substrates, and there was no dependency on layer thickness. Upon electron irradiation silicon vacancies were introduced at the same rate in epilayer and in substrate.

Place, publisher, year, edition, pages
2003. Vol. 433-4, 173-176 p.
Keyword [en]
epilayer, positron annihilation, SiC, vacancies
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48535OAI: oai:DiVA.org:liu-48535DiVA: diva2:269431
Conference
ECSCRM2002
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-08

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Syväjärvi, MikaelYakimova, Rositsa

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