Vacancies in As-grown and electron-irradiated 4H-SiC epilayers investigated by positron annihilation
2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 173-176 p.Conference paper (Refereed)
Epilayers of 4H-SiC were investigated by positron annihilation spectroscopies: four epilayers and their substrates were investigated. The epilayers (47 to 220 mum thick) contained significantly lower grown-in vacancy concentration than did their substrates, and there was no dependency on layer thickness. Upon electron irradiation silicon vacancies were introduced at the same rate in epilayer and in substrate.
Place, publisher, year, edition, pages
2003. Vol. 433-4, 173-176 p.
epilayer, positron annihilation, SiC, vacancies
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48535OAI: oai:DiVA.org:liu-48535DiVA: diva2:269431