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The effect of thermal gradients on SiC wafers
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 193-196 p.Conference paper, Published paper (Refereed)
Abstract [en]

An in-situ curvature measurement equipment has been used to measure the curvature change of 4H-SiC 8degrees off-axis wafers, both with and without a CVD grown epitaxial layer, under beat treatments. The curvature of the wafer was found to increase while heating on the back-side and measuring on the front-side. This was independent whether Si- or C-face was towards the heater. The change in curvature was similar to0.05 m(-1) when ramping the temperature from R.T. up to 1300 degreesC, and was slightly more pronounced in the <11 (2) over bar0> direction compared with the <1 (1) over bar 00> direction.

Place, publisher, year, edition, pages
2003. Vol. 433-4, 193-196 p.
Keyword [en]
curvature, thermal strain
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48536OAI: oai:DiVA.org:liu-48536DiVA: diva2:269432
Conference
ECSCRM2002
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-06

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Hallin, ChristerJoelsson, TorbjörnJanzén, Erik

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