The effect of thermal gradients on SiC wafers
2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 193-196 p.Conference paper (Refereed)
An in-situ curvature measurement equipment has been used to measure the curvature change of 4H-SiC 8degrees off-axis wafers, both with and without a CVD grown epitaxial layer, under beat treatments. The curvature of the wafer was found to increase while heating on the back-side and measuring on the front-side. This was independent whether Si- or C-face was towards the heater. The change in curvature was similar to0.05 m(-1) when ramping the temperature from R.T. up to 1300 degreesC, and was slightly more pronounced in the <11 (2) over bar0> direction compared with the <1 (1) over bar 00> direction.
Place, publisher, year, edition, pages
2003. Vol. 433-4, 193-196 p.
curvature, thermal strain
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48536OAI: oai:DiVA.org:liu-48536DiVA: diva2:269432