liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Stacking fault formation in highly doped 4H-SiC epilayers during annealing
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-5768-0244
2003 (English)Conference paper, Published paper (Refereed)
Abstract [en]

Spontaneous stacking fault formation during annealing in n(+) 4H-SiC epilayers deposited on the n(-) 4H-SiC substrates has been analyzed by conventional and high-resolution transmission electron microscopy (HRTEM). All faults were double layer Shockley faults formed by glide of partial dislocations on two neighboring basal planes. Ends of stacking faults were examined with high-resolution TEM. Approximately half of bounding partial dislocations had extra half planes extending into the substrate while the other half had half planes pointing toward epilayer. This observation is inconsistent with mechanical stress due to doping difference between epilayer and the substrate being the driving force of fault expansion. Formation of single Shockley stacking faults was also observed in n(+) 6H-SiC.

Place, publisher, year, edition, pages
2003. Vol. 433-4, 253-256 p.
Series
Materials Science Forum, 433-436
Keyword [en]
electron microscopy, stacking faults, structural defects
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48537OAI: oai:DiVA.org:liu-48537DiVA: diva2:269433
Conference
ECSCRM2002
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2014-10-08

Open Access in DiVA

No full text

Authority records BETA

Henry, Anne

Search in DiVA

By author/editor
Henry, Anne
By organisation
The Institute of TechnologySemiconductor Materials
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 37 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf