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Stacking fault formation in highly doped 4H-SiC epilayers during annealing
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-5768-0244
2003 (English)Conference paper (Refereed)
Abstract [en]

Spontaneous stacking fault formation during annealing in n(+) 4H-SiC epilayers deposited on the n(-) 4H-SiC substrates has been analyzed by conventional and high-resolution transmission electron microscopy (HRTEM). All faults were double layer Shockley faults formed by glide of partial dislocations on two neighboring basal planes. Ends of stacking faults were examined with high-resolution TEM. Approximately half of bounding partial dislocations had extra half planes extending into the substrate while the other half had half planes pointing toward epilayer. This observation is inconsistent with mechanical stress due to doping difference between epilayer and the substrate being the driving force of fault expansion. Formation of single Shockley stacking faults was also observed in n(+) 6H-SiC.

Place, publisher, year, edition, pages
2003. Vol. 433-4, 253-256 p.
, Materials Science Forum, 433-436
Keyword [en]
electron microscopy, stacking faults, structural defects
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-48537OAI: diva2:269433
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2014-10-08

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Henry, Anne
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