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Doping-related strain in n-doped 4H-SiC crystals
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
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2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 269-272 p.Conference paper, Published paper (Refereed)
Abstract [en]

Stress in epitaxial layers due to crystal lattice mismatch directly influences growth, structure, and basic electro-physical parameters of epitaxial films and also to a large extent the degradation processes in semiconductor devices. In this paper we present a theoretical model for calculating the induced lattice compression due to N doping and the critical thickness concerning formation of misfit dislocations in homoepitaxial 4H-SiC layers with different N doping levels. For example: The model predicts that substrates with N concentration of 3E19 induce misfit dislocations when the epilayer thickness reaches similar to10 mum. Also, N doping concentration in the 1E18-1E19 range yields a strain that not will cause misfit dislocactions at the substrate and epilayer interface until an epilayer thickness of 200-300 mum is reached. Supporting evidence of the induced lattice compression due to N doping have been done by synchrotron white-beam x-ray topography on samples with different N doping level and are compared with the predicted results from the model.

Place, publisher, year, edition, pages
2003. Vol. 433-4, 269-272 p.
Keyword [en]
4H-SiC, doping, model, strain, synchrotron topography
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48538OAI: oai:DiVA.org:liu-48538DiVA: diva2:269434
Conference
ECSCRM2002
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2014-10-08

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Birch, JensLindefelt, UlfHallin, ChristerHenry, AnneYakimova, RositsaJanzén, Erik

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Birch, JensLindefelt, UlfHallin, ChristerHenry, AnneYakimova, RositsaJanzén, Erik
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