Doping-related strain in n-doped 4H-SiC crystals
2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 269-272 p.Conference paper (Refereed)
Stress in epitaxial layers due to crystal lattice mismatch directly influences growth, structure, and basic electro-physical parameters of epitaxial films and also to a large extent the degradation processes in semiconductor devices. In this paper we present a theoretical model for calculating the induced lattice compression due to N doping and the critical thickness concerning formation of misfit dislocations in homoepitaxial 4H-SiC layers with different N doping levels. For example: The model predicts that substrates with N concentration of 3E19 induce misfit dislocations when the epilayer thickness reaches similar to10 mum. Also, N doping concentration in the 1E18-1E19 range yields a strain that not will cause misfit dislocactions at the substrate and epilayer interface until an epilayer thickness of 200-300 mum is reached. Supporting evidence of the induced lattice compression due to N doping have been done by synchrotron white-beam x-ray topography on samples with different N doping level and are compared with the predicted results from the model.
Place, publisher, year, edition, pages
2003. Vol. 433-4, 269-272 p.
4H-SiC, doping, model, strain, synchrotron topography
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48538OAI: oai:DiVA.org:liu-48538DiVA: diva2:269434