Characteristics of planar defects in shallow trenches related to the presence of micropipes
2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 277-280 p.Conference paper (Refereed)
The similarities of the trenches related with micropipes observed in 4H-SiC layers formed by sublimation epitaxy are compared with the line-shaped pits observed by optical microscopy in the vicinity of closing micropipes in 4H-SiC epilayers grown by the CVD method. The disturbance of the step-flow along the trenches and the related extended defects are discussed.
Place, publisher, year, edition, pages
2003. Vol. 433-4, 277-280 p.
extended defects, micropipes
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48539OAI: oai:DiVA.org:liu-48539DiVA: diva2:269435