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Characteristics of planar defects in shallow trenches related to the presence of micropipes
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 277-280 p.Conference paper, Published paper (Refereed)
Abstract [en]

The similarities of the trenches related with micropipes observed in 4H-SiC layers formed by sublimation epitaxy are compared with the line-shaped pits observed by optical microscopy in the vicinity of closing micropipes in 4H-SiC epilayers grown by the CVD method. The disturbance of the step-flow along the trenches and the related extended defects are discussed.

Place, publisher, year, edition, pages
2003. Vol. 433-4, 277-280 p.
Keyword [en]
extended defects, micropipes
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48539OAI: oai:DiVA.org:liu-48539DiVA: diva2:269435
Conference
ECSCRM2002
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-08

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Syväjärvi, MikaelYakimova, Rositsa

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