Orientation-dependent defect formation in silicon carbide epitaxial layers
2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 281-284 p.Conference paper (Refereed)
Thick SiC epitaxial layers have been grown by sublimation on different initial surfaces in the range of 1800-2200degreesC. Evidences have been obtained that independently of the polytype and the surface polarity, there exists a transition region between the substrate and the epilayer in which the crystal structure is highly disturbed either by formation of misfit dislocations, predominantly in growth on vicinal (off-axis) surfaces or by domain boundaries and polytype transformation during growth on atomically flat (on-axis) surfaces. The transition layer thickness may vary from 15 to 50 mum and it seems to depend on the growth rate.
Place, publisher, year, edition, pages
2003. Vol. 433-4, 281-284 p.
structural defects, sublimation growth, transition layer
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-48540OAI: oai:DiVA.org:liu-48540DiVA: diva2:269436