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Orientation-dependent defect formation in silicon carbide epitaxial layers
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 281-284 p.Conference paper, Published paper (Refereed)
Abstract [en]

Thick SiC epitaxial layers have been grown by sublimation on different initial surfaces in the range of 1800-2200degreesC. Evidences have been obtained that independently of the polytype and the surface polarity, there exists a transition region between the substrate and the epilayer in which the crystal structure is highly disturbed either by formation of misfit dislocations, predominantly in growth on vicinal (off-axis) surfaces or by domain boundaries and polytype transformation during growth on atomically flat (on-axis) surfaces. The transition layer thickness may vary from 15 to 50 mum and it seems to depend on the growth rate.

Place, publisher, year, edition, pages
2003. Vol. 433-4, 281-284 p.
Keyword [en]
structural defects, sublimation growth, transition layer
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48540OAI: oai:DiVA.org:liu-48540DiVA: diva2:269436
Conference
ECSCRM2002
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-10

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Yakimova, RositsaSyväjärvi, MikaelIakimov, TihomirJanzén, Erik

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