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Donor-acceptor pair luminescence in 4H-SiC doped with nitrogen and aluminum
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 321-324 p.Conference paper, Published paper (Refereed)
Abstract [en]

The paper presents a fit of the experimental spectrum resulting from donor-acceptor pair recombination in 4H-SiC with a theoretically modeled one. The features of this polytype of SiC arising from its uniaxial property and presence of non-equivalent lattice sites are considered. The nitrogen donor and aluminum acceptor binding energies are discussed.

Place, publisher, year, edition, pages
2003. Vol. 433-4, 321-324 p.
Keyword [en]
donor-acceptor pair recombination, ionization energy, luminescence
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48545OAI: oai:DiVA.org:liu-48545DiVA: diva2:269441
Conference
ECSCRM2002
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-06

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Ivanov, Ivan GueorguievJanzén, Erik

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