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Infrared optical properties of 3C, 4H and 6H silicon carbide
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Optics .ORCID iD: 0000-0001-9229-2028
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-5768-0244
Linköping University, The Institute of Technology.ORCID iD: 0000-0003-2749-8008
2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 329-332 p.Conference paper, Published paper (Refereed)
Abstract [en]

Dielectric functions for 3C-, 4H- and 6H-silicon carbide in the infrared photon energy region have been obtained using spectroscopic ellipsometry. Using samples with the optic axes both parallel and perpendicular to the sample surface normal, both the ordinary and extra-ordinary dielectric function were probed. Phonon modes and optical anisotropy are shown in the dielectric spectra.

Place, publisher, year, edition, pages
2003. Vol. 433-4, 329-332 p.
Keyword [en]
dielectric function, ellipsometry, silicon carbide
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48546OAI: oai:DiVA.org:liu-48546DiVA: diva2:269442
Conference
ECSCRM2002
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2014-10-08

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Arwin, HansHenry, AnneJärrendahl, Kenneth

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