liu.seSearch for publications in DiVA
Change search
ReferencesLink to record
Permanent link

Direct link
D-II PL intensity dependence on dose, implantation temperature and implanted species in 4H-and 6H-SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Show others and affiliations
2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 345-348 p.Conference paper (Refereed)
Abstract [en]

In most semi-conductor processing ion implantation is a key technology. The drawback of ion implantation is that a great deal of lattice defects, such as vacancies, interstitials, anti sites and complexes, are introduced. The annealing behaviour of these defects is important for the viability of ion implantation as a commonly used method. In SiC a defect that is only seen after ion implantation and not after irradiation with neutrons or electrons is the D-II defect. The use of Si or C as implanted species have made it possible to investigate the D-II photoluminescence (PL) intensity dependence on an excess of either of the two constituents in SiC. The effect of performing a hot implant at 600degreesC compared to a room temperature implant was also looked into. The D-II PL intensity was measured after a 1500degreesC anneal. When the implantation was performed at room temperature the C implanted samples showed a significantly higher D-II luminescence than the Si implanted. This makes it tempting to assume that a surplus of C and likely C interstitials are involved in the defect formation. However, when the implantation is done at 600degreesC the difference between Si and C implanted samples almost disappears and a slightly higher D-II intensity can be seen in the Si implanted samples. This effect may be due to the mobility of C interstitials at temperatures above 500degreesC. This clearly demonstrates the effect of hot implantation that there is a major change in D-II PL intensity even after a 1500degreesC anneal.

Place, publisher, year, edition, pages
2003. Vol. 433-4, 345-348 p.
Keyword [en]
annealing, D-II, ion implantation, SiC
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-48547OAI: diva2:269443
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-06

Open Access in DiVA

No full text

Search in DiVA

By author/editor
Carlsson, FredrikJanzén, Erik
By organisation
The Institute of TechnologyDepartment of Physics, Chemistry and BiologySemiconductor Materials
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Total: 10 hits
ReferencesLink to record
Permanent link

Direct link