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D-II PL intensity dependence on dose, implantation temperature and implanted species in 4H-and 6H-SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
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2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 345-348 p.Conference paper, Published paper (Refereed)
Abstract [en]

In most semi-conductor processing ion implantation is a key technology. The drawback of ion implantation is that a great deal of lattice defects, such as vacancies, interstitials, anti sites and complexes, are introduced. The annealing behaviour of these defects is important for the viability of ion implantation as a commonly used method. In SiC a defect that is only seen after ion implantation and not after irradiation with neutrons or electrons is the D-II defect. The use of Si or C as implanted species have made it possible to investigate the D-II photoluminescence (PL) intensity dependence on an excess of either of the two constituents in SiC. The effect of performing a hot implant at 600degreesC compared to a room temperature implant was also looked into. The D-II PL intensity was measured after a 1500degreesC anneal. When the implantation was performed at room temperature the C implanted samples showed a significantly higher D-II luminescence than the Si implanted. This makes it tempting to assume that a surplus of C and likely C interstitials are involved in the defect formation. However, when the implantation is done at 600degreesC the difference between Si and C implanted samples almost disappears and a slightly higher D-II intensity can be seen in the Si implanted samples. This effect may be due to the mobility of C interstitials at temperatures above 500degreesC. This clearly demonstrates the effect of hot implantation that there is a major change in D-II PL intensity even after a 1500degreesC anneal.

Place, publisher, year, edition, pages
2003. Vol. 433-4, 345-348 p.
Keyword [en]
annealing, D-II, ion implantation, SiC
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48547OAI: oai:DiVA.org:liu-48547DiVA: diva2:269443
Conference
ECSCRM2002
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-06

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Carlsson, FredrikJanzén, Erik

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CiteExportLink to record
Permanent link

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Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf