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Correlation between electrical and optical mapping of boron related complexes in 4H-SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-5768-0244
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2003 (English)In: Materials Science Forum, Vols. 433-436, 2003, Vol. 433-4, 423-426 p.Conference paper, Published paper (Refereed)
Abstract [en]

Boron related photoluminescence (PL) and capacitance transient spectroscopy (DLTS and MCTS) peaks have been investigated around SIMS craters. Enhancement of boron and hydrogen related PL was observed in the vicinity of the crater, whereas the concentration of electrically active boron as measured by MCTS has decreased considerably. Comparison of the boron MCTS peak behavior after electron and proton irradiation is presented. Possible defect models based on the obtained results are discussed.

Place, publisher, year, edition, pages
2003. Vol. 433-4, 423-426 p.
Keyword [en]
boron, DLTS, hydrogen, MCTS, photoluminescence, SIMS
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48549OAI: oai:DiVA.org:liu-48549DiVA: diva2:269445
Conference
ECSCRM2002
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2014-10-08

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Storasta, LiutaurasMagnusson, BjörnHenry, AnneJanzén, Erik

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